| 摘要 |
A semiconductor memory device includes a transistor having a gate electrode formed above a semiconductor substrate and source and drain regions formed in the semiconductor substrate, a bit line contact formed in an interlayer insulating film formed to cover the transistor and connected to one of the source and drain regions, a storage node electrode contact formed in the interlayer insulating film and connected to the other of the source and drain regions, a bit line contact plug formed on the bit line contact, a storage node electrode contact plug formed on the storage node electrode contact, a bit line formed to connect to the bit line contact plug, and a capacitor storage node electrode formed to connect to the storage node electrode contact plug.
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