| 摘要 |
A method for controlling a deposition process, includes providing a wafer in a chamber of a deposition tool, the deposition tool being adapted to operate in accordance with a recipe; providing reactant gases to the chamber, the reactant gases reacting to form a layer on the wafer; allowing exhaust gases to exit the chamber; measuring characteristics of exhaust gases; and changing the recipe based on the characteristics of the exhaust gases. A deposition tool includes a chamber, a gas supply line, a gas exhaust line, a gas analyzer, and a controller. The chamber is adapted to receive a wafer. The gas supply line is coupled to the chamber for providing reactive gases. The gas exhaust line is coupled to the chamber for receiving exhaust gases. The gas analyzer is coupled to the gas exhaust line and adapted to determine characteristics of the exhaust gases. The controller is adapted to control the processing of the wafer in the chamber based on the characteristics of the exhaust gases.
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