Semiconductor integrated circuit and method for forming the same

摘要

In forming a thin film transistor (TFT), a semiconductor region is formed on a glass substrate and then a gate electrode is formed on the semiconductor region through an gate insulating film. After the gate electrode and a gate electrode arrangement extended from the gate electrode is anodized, insulators each having approximately rectangular shape are formed on side surfaces of the gate electrode and the gate electrode arrangement. An interlayer insulator is formed on a whole surface, and then the second layer arrangement is formed on the interlayer insulator. In an overlap portion in which the second layer arrangement overlaps the gate electrode and the gate electrode arrangement, since the insulators is formed, a slope is small.