发明名称 |
Method of correcting topographical effects on a micro-electronic substrate |
摘要 |
A method of correcting topographical effects on a microelectronic substrate, the method comprising the steps consisting in depositing a layer of resin on the structure to be planarized having topography in relief surrounded by isolation zones, and subjecting said resin layer in its zones superposed on underlying zones of high topographical density to photolithography by means of a mask possessing a standard mesh without any one-to-one coincidence with the underlying topography.
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申请公布号 |
US6387808(B1) |
申请公布日期 |
2002.05.14 |
申请号 |
US20000620896 |
申请日期 |
2000.07.21 |
申请人 |
FRANCE TELECOM |
发明人 |
SCHILTZ ANDRé;PAOLI MARYSE;SCHIAVONE PATRICK;PROLA ALAIN |
分类号 |
G03F7/20;H01L21/027;H01L21/3105;(IPC1-7):H01L21/302 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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