发明名称 |
Method and system for providing localized gate edge rounding with minimal encroachment and gate edge lifting |
摘要 |
A system and method for providing a memory cell on a semiconductor is disclosed. The method and system include providing an oxide layer on the semiconductor and providing at least one gate stack disposed above the oxide layer. The at least one gate stack has a corner contacting the oxide layer. The method and system further include exposing at least the corner of the at least one gate stack and rounding at least the corner of the at least one gate stack.
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申请公布号 |
US6387755(B1) |
申请公布日期 |
2002.05.14 |
申请号 |
US19970992616 |
申请日期 |
1997.12.17 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
THURGATE TIMOTHY J.;LUNING SCOTT D. |
分类号 |
H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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