发明名称 |
Triple metal line 1T/1C ferroelectric memory device and method for fabrication thereof |
摘要 |
Disclosed is a triple metal line 1T/1C ferroelectric memory device and a method to make the same. A ferroelectric capacitor is connected to the transistor through a buried contact plug. An oxidation barrier layer lies between the contact plug and the lower electrode of the capacitor. A diffusion barrier layer covers the ferroelectric capacitor to prevent diffusion of material into or out of capacitor. As a result of forming the oxidation barrier layer, the contact plug is not exposed to the ambient oxygen atmosphere thereby providing a reliable ohmic contact between the contact plug and the lower electrode. Also, the memory device provides a triple interconnection structure made of metal, which improves device operation characteristics.
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申请公布号 |
US6388281(B1) |
申请公布日期 |
2002.05.14 |
申请号 |
US20000617912 |
申请日期 |
2000.07.17 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
JUNG DONG-JIN;KIM KI-NAM |
分类号 |
H01L27/105;H01L21/02;H01L21/316;H01L21/8246;H01L27/10;H01L27/115;(IPC1-7):H01L29/76;H01L27/108 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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