| 发明名称 |
Anneal for enhancing the electrical characteristic of semiconductor devices |
| 摘要 |
A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H2). In a prefered embodiment of the present invention the ambient comprises H2 and N2.
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| 申请公布号 |
US6387761(B1) |
申请公布日期 |
2002.05.14 |
| 申请号 |
US20000499336 |
申请日期 |
2000.02.04 |
| 申请人 |
APPLIED MATERIALS, INC.;VANGUARD SEMICONDUCTOR, LTD. |
发明人 |
SHIH WONG-CHENG;NARWANKAR PRAVIN K.;URDAHL RANDALL S.;SAHIN TURGUT |
| 分类号 |
H01L21/02;H01L21/28;H01L21/314;H01L21/318;H01L29/51;(IPC1-7):H01L21/823;H01L21/823;H01L21/336;H01L21/320;H01L21/476 |
主分类号 |
H01L21/02 |
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