发明名称 |
Method of forming three-dimensional semiconductors structures |
摘要 |
Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow columns of metal silicide embedded in a matrix of single crystal, epitaxially grown silicon. Higher substrate temperatures and lower deposition rates yield larger columns that are farther apart while more silicon produces smaller columns. Column shapes and locations are selected by seeding the substrate with metal silicide starting regions. A variety of 3-dimensional, exemplary electronic devices are disclosed.
|
申请公布号 |
US6387781(B1) |
申请公布日期 |
2002.05.14 |
申请号 |
US19900524959 |
申请日期 |
1990.05.18 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
FATHAUER ROBERT W. |
分类号 |
H01L21/285;H01L21/36;H01L21/768;(IPC1-7):H01L21/36 |
主分类号 |
H01L21/285 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|