| 摘要 |
There is provided a method for manufacturing a thin film transistor. The present invention can reduce the number of process steps for manufacturing a thin film transistor, and also can lower contact resistance between layers. The manufacturing method deposits a buffer layer and an active layer on a substrate. The active layer is crystalized and patterned. Then, an insulating layer is deposited on an upper surface of the active layer and patterned to form a gate electrode on an upper surface of the insulating layer by a photolithography process using a photoresist layer. The photoresist layer covering the gate electrode is reflowed by heating and covers the edges of the gate electrode. A contact layer is formed by doping in high concentration at both edges of the active layer by plasma ion-injecting using the reflowed photoresist layer as a mask. After removing the photoresist layer, an LDD region is formed at the active layer by ion-injecting in low concentration. Then, an interlayer insulating layer is deposited on an upper surface of the gate electrode, exposing the contact layer by forming a contact hole at a predetermined portion of the interlayer insulating layer. A three-layered thin film of a first metal layer, an ITO layer and a second metal layer is sequentially deposited and patterned to form a source electrode, a drain electrode and a pixel electrode. A data line is formed on the second metal layer of the source electrode by an electroplating method.
|
