发明名称 |
Nitrogen-rich silicon nitride sidewall spacer deposition |
摘要 |
Salicide processing is implemented with nitrogen-rich silicon nitride sidewall spacers that allow a metal silicide layer e.g., NiSi, to be formed over the polysilicon gate electrode and source/drain regions using salicide technology without associated bridging between the metal silicide layer on the gate electrode and the metal silicide layers over the source/drain regions.Bridging between a metal silicide e.g., nickel silicide, layer on a gate electrode and metal silicide layers on associated source/drain regions is avoided by forming nitrogen-rich silicon nitride sidewall spacers with increased nitrogen, thereby eliminating free Si available to react with the metal subsequently deposited and thus avoiding the formation of metal silicide on the sidewall spacers.
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申请公布号 |
US6387767(B1) |
申请公布日期 |
2002.05.14 |
申请号 |
US20010781448 |
申请日期 |
2001.02.13 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BESSER PAUL R.;NGO MINH VAN;WOO CHRISTY MEI-CHU;KLUTH GEORGE JONATHAN |
分类号 |
H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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