SILICON SINGLE CRYSTAL PULL UP DEVICE, METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL USING THAT DEVICE AND SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a silicon single crystal pull up device which is able to increase pulling up speed of the single crystal so that the R-OSF appears on a periphery of crystal surface orthogonal to a pulling up direction even in the case of growing silicon single crystal with a large diameter. SOLUTION: In the silicon single crystal pull up device for manufacturing the crystal of >= 300 mm in diameter, the ratio of internal diameter to height of a heater 20 surrounding the crucible 1 is set at >=1.5.