| 摘要 |
A method for polishing a copper pattern on a workpiece is disclosed. The invention provides for selective micro-polishing of local regions of divergence of the profile of the copper pattern, to a predetermined state wherein the profile more closely approximates the profile of surrounding surfaces. Thereafter, the entire workpiece surface is polished in accordance with a predetermined polish profile. In the case of semiconductor wafers, local regions of a copper layer at the periphery of the wafer often have a thickness which is outside the thickness range for which a chemical mechanical polishing (CMP) tool can effectively polish the copper layer in accordance with a predetermined polish profile. According to one aspect of the present invention, local regions at the periphery of the wafer are first selectively polished to a predetermined state, after which a CMP tool can polish the entire wafer in accordance with a predetermined polish profile to achieve a desired surface configuration, whether planar or curved.
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