| 发明名称 |
Method of fabricating a dielectric antifuse structure |
| 摘要 |
A dielectric antifuse structure is fabricated in an integrated circuit. The antifuse structure is incorporated in a contact hole in an oxide layer and has a dielectric layer arranged between a first conductive layer and a second conductive layer.
|
| 申请公布号 |
US6387792(B2) |
申请公布日期 |
2002.05.14 |
| 申请号 |
US20010888021 |
申请日期 |
2001.06.22 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
LEHR MATTHIAS;TEWS RENE |
| 分类号 |
H01L23/525;(IPC1-7):H01L29/00 |
主分类号 |
H01L23/525 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
