发明名称
摘要 PURPOSE:To prevent the destruction of a MOSFET driving circuit at the time of the destruction of a MOSFET. CONSTITUTION:An overcurrent limiting bypass route 16 is constituted of a second overcurrent limiting resistor 14 and an NPN transistor 15 whose base is connected through a resistor 12 for base current control to the contact point of a Zener diode 3 and a first overcurrent limiting resistor 13, in which collector is connected through the second overcurrent limiting resistor 14 to the emitter of a PNP transistor 6 and emitter is connected to the source of the MOSFET 1. When an overcurrent is made flow to the MOSFET driving circuit 2, the overcurrent limiting bypass route 16 is turned to a closed state. Thus, the overcurrent is limited by the first overcurrent limiting resistor 13 and the second overcurrent limiting resistor 14.
申请公布号 JP3282378(B2) 申请公布日期 2002.05.13
申请号 JP19940143664 申请日期 1994.06.24
申请人 发明人
分类号 H01L27/088;H01L21/8234;H03K17/08;H03K17/567 主分类号 H01L27/088
代理机构 代理人
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