| 摘要 |
PURPOSE: A method for forming a metal film in a semiconductor device is provided to be capable of improving gap-filling property, reducing surface roughness and simplifying processes without performing an annealing process. CONSTITUTION: An insulating layer(13) is formed on a silicon substrate(11) having a junction region(12). A contact hole is formed to expose the junction region by selectively etching the insulating layer(13). A barrier metal film(15) is formed by sequentially depositing titanium and titanium tungsten into the contact hole. A tungsten film(16) and a metal film(17) are sequentially formed on the barrier metal film(15). At the time, the thickness of the titanium and titanium tungsten are 150-250Å and 450-550Å, respectively.
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