METHOD FOR MANUFACTURING METAL WIRING IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a metal wiring in a semiconductor device is provided to be capable of preventing diffusion of copper and obtaining metal wiring without using RIE(Reactive Ion Etching). CONSTITUTION: The first oxynitride layer(12) and an interlayer dielectric(13) are sequentially formed on a silicon substrate(1) having the first metal wiring(11). After forming a groove in the interlayer dielectric, a contact hole is formed by selectively etching the interlayer dielectric. A barrier layer(14) made of Ti/TiN is formed in the contact hole, and the second metal wiring(15) is formed by filling copper into the contact hole. Then, the second oxynitride layer(16) is formed on the resultant structure.