| 摘要 |
<p>PURPOSE:To improve the detection efficiency of a photodetector of the liquid crystal display device by constituting the photoelectric conversion part of the photodetector of an amorphous Si (a-Si) compd. CONSTITUTION:A 4-type a-Si 405 is deposited by evaporation on a-SiGe 404 and is subjected to patterning of n-type a-Si 403, a-SiGe 404 and P-type a-Si 405 by etching. Further, transparent electrodes 407 are formed. Incident light transmits the transparent electrodes 407 in this constitution and is made incident on the depleted a-SiGe region 404. The absorption coefft. of the a-SiGe is larger by about one digit than the absorption coefft. of a single crystal Si and 80% quantum efficiency is obtd. at 800nm wavelength if the film thickness of the a-SiGe is assumed to be 1mum. The light transmitted through the photodetect or region is reflected by metallic wirings 402 and is again made incident on the photodetection region and, therefore, the detection efficiency is further enhanced.</p> |
