| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that comprises an embedded DRAM device and a logic device, and to provide a its manufacturing method. SOLUTION: This device comprises a monocrystal substrate having an almost flat surface, a first surface region on the flat surface having a silicon on insulator region, a second surface region on the flat surface which is a monocrystal bulk region, an embeded logic device which is formed in the silicon on insulator region, an embedded memory device which is formed in the monocrystal bulk region, and a trench in the bulk monocrystal region. |
