| 摘要 |
PROBLEM TO BE SOLVED: To suppress a junction leakage and a contact leakage due to a misalignment while restraining the short channel effect, by reducing the dopant concentration of a substrate in a surface channel type PMOSFET. SOLUTION: In a CMOS of a dual-gate structure, a surface channel type PMOS whose gate electrode is formed with a P+ type poly-silicon film, is characterized in that arsenic or antimony is doped into the substrate under the gate electrode and nitrogen whose peak concentration is 2×1021/cm3 or more is doped into the gate oxide. |
