发明名称 METHOD OF FABRICATING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device, by which a metal electrode portion is efficiently formed. SOLUTION: An opening 5 which exposes a pad portion 3 is formed in a passivation film 4 on the surface of a semiconductor substrate 1. The metal electrode portion 8 is disposed in the opening 5 by delivering a metal paste from an ink jet nozzle 10 after a bimetal film 6 is placed.
申请公布号 JP2002134537(A) 申请公布日期 2002.05.10
申请号 JP20000323641 申请日期 2000.10.24
申请人 ROHM CO LTD 发明人 KOBORI YOSHIMICHI
分类号 H01L21/60 主分类号 H01L21/60
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