| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a reliable superjunction semiconductor device which has high L load avalanche withstand (breakdown withstand) amount. SOLUTION: The thickness of a parallel pn layer 12 at an active section 10 is set thinner than that of a pn layer 22 of a breakdown voltage structure section 20, and an n+ intermediate drain layer 21, having concentration higher than that of an n-drift region 12a, is inserted between the parallel pn layer 12 and an n+ drain layer 11. Also, impurity concentration distribution is provided in the parallel pn layer 12 at the active section 10, and impurity concentration at a deep portion may be set higher than that of a shallow portion.</p> |
