| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer thinning method and a wafer thinning device, which can thin down a wafer to a thickness of not thicker than 250μm in a single process and in a short time, can reduce machining flaws and can reduce the breakage rate. SOLUTION: This wafer thinning method includes a vacuum chucking process (A), in which after a device 2 has been formed on a surface of a wafer 1 and an insulating film is formed over the device 2, the wafer is turned upside-down and chucked onto a disc 4 by a vacuum, a diamond grinding process (B), in which an ELID grinding is applied to the rear surface of the wafer by using a conducting wheel containing diamond abrasive grains, and a mechano-chemical grinding process (C) in which an ELID grinding is applied by using a conducting wheel containing abrasive grains producing a mechano-chemical action. The diamond grinding process (B) and the mechano-chemical grinding process (C) are carried out on the same machine.
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