EVALUATING METHOD OF SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide an evaluating method simply introduced in a fabricating process so as to evaluate whether an epitaxial defect in a process of epitaxial growth of an epitaxial wafer arises or not at the stage of a silicon wafer or a silicon monocrystal before the process of epitaxial growth. SOLUTION: The evaluating method of a semiconductor wafer has: a process for previously finding a relationship between a distribution of the defect induced by a specific process on the semiconductor wafer and a distribution of a crystal defect existing in the semiconductor wafer before being processed by the specific process; and a process for measuring the distribution of the crystal defect existing in the semiconductor wafer as an evaluated object, and predicting presence of the defect induced after the semiconductor wafer as the evaluated object is processed by the specific process based on the distribution of the crystal defect and the relationship.