| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device with low current operation by preventing at a point near to a ridge and high reliability and yield with respect to a semiconductor laser having a current block layer made of material that doesn't absorb an oscillation light beam. SOLUTION: The semiconductor laser has on a semiconductor substrate a ridge stripe current path and a current block layer which doesn't absorb the oscillation light. The side face of the ridge stripe has a recessed curved face which doesn't belong to specified face orientation, while the current block layer for fitting in the ridge striped side face has a projected curved face at a position corresponding to the recessed curved face.
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