| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a film, capable of forming a silicon oxide film or the like with high throughput, while improving stability of particles by suppressing high manufacturing cost and occurrence of a void in aluminum wirings, and to provide a plasma chemical vapor growing system. SOLUTION: The method for forming the film comprises the steps of treating to form, for example, a film such as silicon oxide film or the like on a substrate W to be treated, by using a high-density plasma chemical vapor growing system having a substrate support 20 in a chamber 1, and cleaning a chamber interior with radical ions, such as those of fluorine or the like at each time of treating a prescribed number of the substrates W to be treated. In this case, a chamber wall 10 and the support 20 are cooled to a prescribed temperature by a common cooling system (10a, 20a) guided into the wall 10 and the support 20 at film forming treatment times, and advancement of fluoride of a pedestal and abrupt generation of particles are suppressed, and the silicon oxide film or the like is formed via a high throughput without causing voids to be generated in the aluminum wirings.
|
