| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric converter exhibiting spectral sensitivity characteristics which is relatively close to the peak value of visual sensitivity of human beings using a simple constitution. SOLUTION: The photoelectric converter comprises a p-type silicon single- crystal substrate (hereinafter, referred to as the substrate) 10, an epitaxial layer 12 formed on the major surface of the substrate 10 irradiated with light by epitaxial growth, a p+ type heavily-doped embedded layer 13 formed on the substrate 10 by diffusing impurities, and a diffusion layer 11 formed by diffusing impurities of types different from those of the epitaxial layer 12 into the epitaxial layer 12. Since the embedded layer 13 is doped heavily, carriers generated by irradiation recombine in the embedded layer 13, to disappear and the epitaxial layer 12 becomes an active region, thus reducing the sensitivity with respect to light of long wavelength. Consequently, sensitivity in near infrared region is lowered, and spectral sensitivity characteristics relatively close to the peak value of visual sensitivity of human being can be obtained, using a simple arrangement of merely providing the embedded layer 13.
|
