| 摘要 |
PROBLEM TO BE SOLVED: To form a CGS film containing no impurity of catalytic metal by conducting a photolithography process only once. SOLUTION: A region 14a in a CGS film 14, subjected to gettering with phosphorus element, is defined by an opening pattern 16a of a photoresist 16 and a region 14b in the CGS film 14 subjected to silicon etching is defined by an opening 15a of a gettering mask film 15. Since the opening 15a of the gettering mask film 15 is formed by self-aligment technology utilizing the photoresist 16 as a mask, the opening pattern of the gettering mask film is formed, without being shifted from the opening pattern 16a of the photoresist 16 and a CGS film containing no impurity of catalytic metal can be formed by performing a photolithographic process only once.
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