| 摘要 |
<p>A silicon controlled rectifier electrostatic discharge protection circuit with external on-chip triggering and compact internal dimensions for fast triggering. The ESD protection circuit includes a silicon controlled rectifier (SCR) (202) having an anode (122) coupled to the protected circuitry and a cathode (124) coupled to ground, where the cathode has at least one high-doped region (312m). At least one trigger-tap (401) is disposed proximate to the at least one high-doped region and an external on-chip triggering device (205) is coupled to the trigger-tap and the protected circuitry.</p> |
