NON-VOLATILE SEMICONDUCTOR MEMORY AND EXECUTION METHOD FOR ITS AUTO-PROGRAM

摘要

PROBLEM TO BE SOLVED: To attain a simultaneous execution operation function in a plurality of banks and to shorten a time for performing an auto-program. SOLUTION: This memory is provided with a control circuit 17 which receives a signal inputted through an IO buffer circuit 16 and each memory control signal CE, WE, OE inputted through external terminals T3-T5, outputs a verify- signal C1, a write-in control signal C2, an auto-program mode signal C3 for setting an auto-program mode, and a flag signal C4 for controlling auto-program, and performs internal sequence control, and an internal control circuit 3 which receives the verify-signal C1, the write-in control signal C2, the auto-program mode signal C3, and the flag signal C4, and controls switching of a power source at the time of simultaneous execution operation so that each write-in operation and verify-operation of respective banks A, B can be performed alternately.