| 摘要 |
PROBLEM TO BE SOLVED: To make silicon epitaxially grow in stabilized state by crystallizing an amorphous silicon thin film over a large area. SOLUTION: An amorphous silicon film 2 is formed on a quartz substrate 1, an SiO2 film 3 is formed partially on the amorphous silicon film 2, and a catalytic element is added to a specified region 4 of the amorphous silicon film 2, where the SiO2 film 3 is not formed. Subsequently, the specified region 4 added with the catalytic element and the specified region of the amorphous silicon film 2 added with no catalytic element and formed with the SiO2 film 3 are subjected to high-temperature annealing. Furthermore, the method includes adding the catalytic element to the specified region 4 and to subject the specified region 4 added with catalytic element and the specified region which is not added with the catalytic elements to high-temperature annealing.
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