| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and materials for forming a dielectric film having a low dielectric-constant, high heat-resistance, superior adsorption-proof, and good adhesion. SOLUTION: The method for forming a silicon-polymer dielectric film having a low dielectric-constant, high heat-resistance, and superior adsorption-proof, is applied to a plasma CVD apparatus. The first process is to vaporize a silicon- based hydrocarbon compound which is expressed by, general formulaα0βCxHy (α=3,β=3 or 4, x and y integers), and then introduce the vaporized compound into the reaction chamber of the plasma CVD apparatus. The next process is to introduce an additional gas into the reaction chamber. The residence time of the material gas can be elongated by reducing a sum of flow of the reaction gas using a method for forming a silicon-compound film having continuously-porous structure with low dielectric-constant.
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