| 摘要 |
PROBLEM TO BE SOLVED: To realize a contact structure where reduction in junction leakage and low contact resistance are made compatible. SOLUTION: This semiconductor device is provided with a P-type diffusion layer 41, which is formed on a silicon substrate 11 and a isolated by an element isolation region 12 formed thereon, on; a high-melting point metal silicide layer 43 formed on a surface of the P-type diffusion layer 41; a connection hole 47 on the bottom of which boundary of the P-type diffusion layer 41 and the element isolation region 12 is positioned and to the inside of which the side part of the P-type diffusion layer 41 is exposed; and a compound layer 50, which is constituted of a high melting point metal layer 48 and the silicon substrate 11 and formed inside the connection hole 47. A distance (a) in the depthwise direction from the deepest part of the compound layer 50 to a surface of the high-melting point metal silicide layer 43, and a distance (b) in the depthwise direction from a junction part in the depthwise direction of the P-type diffusion layer 41 to the surface of the high-melting point metal silicide layer 43, have the relation a/b<=0.37. |
