发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To suppress bad influence to an environment by simplifying a process, reducing a cost and thinning a device. SOLUTION: The surface of a part corresponding to the chip mounting area of a glass board 11 is activated by plasma processing in vacuum, a side forming the electrode of a thin film-like silicon chip 12 and the face 12a of the contrary side are adhered to the activated surface A, and a required shape wiring pattern 15 is formed so as to connect a conductor 14 exposed from the glass board 11 to the electrode of the silicon chip 12.
申请公布号 JP2002134658(A) 申请公布日期 2002.05.10
申请号 JP20000323949 申请日期 2000.10.24
申请人 SHINKO ELECTRIC IND CO LTD 发明人 MASHINO NAOHIRO
分类号 H01L23/12;H01L21/48;H01L21/58;H01L21/60;H01L23/538;H01L25/10 主分类号 H01L23/12
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