| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an element of superior luminosity, by further causing Vf of a nitride semiconductor light-emitting element of double hetero structure to be lowered. SOLUTION: The nitride semiconductor light-emitting element is provided with an active layer 5 for emitting a light between an n-type nitride semiconductor layer 4 and a p-type nitride semiconductor layer 6, and a positive electrode 9 on the surface of the p-type nitride semiconductor layer. Here, the p-type nitride semiconductor layer comprises, in the order starting from the contacting side of the positive electrode, a first p-type nitride semiconductor layer 71 of high acceptor impurity concentration, and a second p-type nitride semiconductor layer 72 of acceptor impurity concentration lower than that of the first p-type nitride semiconductor layer.</p> |
