| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of the conventional constitutions, where a warpage is produced in a wafer by the thermal distortion and the difference in linear expansion coefficients of nitride films in the heat treatment process of a semiconductor element region forming process, and as the thickness of the wafer is reduced in recent times, many cracking damages of wafers caused by the warpages are produced in wafers, whose finished thicknesses are not thicker than 150μm in a B/G grinding process. SOLUTION: Grooves are formed on dicing streets used in an assembly process by etching in a plasma treatment. Using such a constitution, a tensile stress causing a warpage is divided and the warpage is reduced before a B/G grinding process, so that the tightness between a table and a wafer can be improved; and even if the finished thickness of the wafer is thinner than the conventional thickness, defects produced by wafer crackings and damages can be significantly reduced. |
