ETCHING LIQUID, METHOD FOR ETCHING, METHOD FOR MANUFACTURING CAPACITOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To remove a surface layer by selectively etching the lower electrode made of an amorphous silicon, while preventing etching of a contact electrode made of a crystalline silicon in a stacked capacitor of cylindrical structure. SOLUTION: A method for manufacturing the capacitor comprises the steps of forming the lower electrode 20 made of an amorphous silicon on the contact electrode 17 made of a polycrystalline silicon and a sidewall film 15, then etching the electrode 20 through wet etching, by using an aqueous solution containing NH4OH and H2O2 as an etching liquid, and removing the surface layer.