| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a nitride semiconductor film, in which strains are reduced by relaxing difference in the coefficient of thermal expansion between a substrate made of a material different from a nitride semiconductor and a nitride semiconductor, and to provide a method for producing a nitride semiconductor substrate in which strain is reduced. SOLUTION: A nitride semiconductor is grown on a composite substrate, where a layer having a coefficient of thermal expansion smaller than that of the nitride semiconductor, is provided on the opposite sides of a layer, having a coefficient of thermal expansion larger than that of the nitride semiconductor. More specifically, a nitride semiconductor is grown on one major surface of a composite substrate, where silicon is stuck to the opposite major surfaces of a sapphire substrate. Furthermore, a silicon substrate is removed through etching, to obtain a nitride semiconductor substrate. |
