| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implanting apparatus, allowing the ion implanting conditions to be comprehended approximately and easily for each wafer, and to provide its evaluating method and semiconductor wafer. SOLUTION: The ion implanting apparatus 10 has a mechanism, which extends from an ion source 11 to an ion implanting chamber 13 via a beam line 12. A sample table 313 in the implanting chamber 13 has a rotation- controllable semiconductor wafer WF mount 132 which is rotatably controlled to align an orientation flat of the semiconductor wafer WF and rotate the wafer WF at a specified rotation angle. A wafer support (clamp ring) 133 for retaining and supporting the peripheral edge of the wafer has one or more cuts, i.e., empty regions OPN1, OPN2, into which ions are implanted to form monitor regions for evaluation while ion implanting is being conducted into element regions of the wafer.
|
