| 摘要 |
PROBLEM TO BE SOLVED: To provide a suitable architecture for reliable write, read and erase of magnetoresistive memory cells in a memory cell structure (namely, magnetoresistive memory). SOLUTION: The magnetoresistive memory is provided with a structure of magnetoresistive memory cells arranged in plural rows and/or plural columns, bit lines for each of the columns connected to a 1st electrode of the memory cells belonging to the columns, word lines for each of the rows connected to a 2nd electrode of the memory cells belonging to the rows, a reading voltage source which can individually be connected to the 1st end part of the word lines via switching elements, and a voltage evaluation means at least one of the inputs of which can individually be connected by the switching elements to the 1st end part of the bit lines via an evaluation line.
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