| 摘要 |
A semiconductor device comprises a semiconductor substrate (101) of the first conductivity type, a source layer (102) of the second conductivity type formed over the surface in the semiconductor substrate (101), a drain layer (103) of the second conductivity type facing the source layer (102) with a predetermined interval from the source layer (102), a gate insulation film (104) formed over the semiconductor substrate (101), a gate layer (105) formed over the gate insulation film (104) between the source layer (102) and the drain layer (103), a source electrode (108) formed over the semiconductor substrate (101) and electrically connected to the drain layer (103), a drain electrode (109) formed over the semiconductor substrate (101) and electrically connected to the drain layer (103), a gate electrode (107) formed over the semiconductor substrate (101) and electrically connected to the gate layer (105), and a capacity adjusting electrode (114) formed over the gate insulation film (104).
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