| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable process for manufacturing a semiconductor device, capable of realizing substantially homogeneous device characteristics by homogenizing the device parameters of the semiconductor. SOLUTION: In the manufacturing process, a photoresist is disposed on a semiconductor substrate 10 to cover the front surface 11 of the substrate 10, and trenches 12, 14, 16 and 18 therein are filled. The photoresist is planarized by chemical-mechanical polishing process, and an uniform thickness is realized over the entire substrate 10. In an anisotropic etching process, the photoresist inside the trenches 12, 14, 16 and 18 is partially removed, thereby forming recessed parts inside the trenches 12, 14, 16 and 18. Since the thickness of the photoresist is uniform over the entire substrate 10 prior to the etching process, the depths of the different trenches 12, 14, 16 and 18 become substantially equal each other. |
