| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of a DRAM hybrid logic LSI being influenced by cobalt overreaction, due to heat treatment for forming a DRAM and a second heat treatment suppresses spikes from growing or cobalt from over-reacting, resulting in junction leakages or contact leakages by due to the influence of the heat treatment for forming the DRAM. SOLUTION: The manufacturing method comprises, after depositing a cobalt layer on a diffused layer region surface of a silicon substrate, a first heat treatment at a first temperature to silicidize this layer, thereby forming at least a Co2Si layer or a CoSi layer, a second heat treatment at a second temperature higher than the first temperature to silicidize the cobalt silicide layer formed by the first treatment, thereby forming a CoSi2 layer, and a heat treatment in a following process and a third heat treatment to silicidize the cobalt silicide layer, thereby forming a CoSi2 layer. |
