| 摘要 |
PROBLEM TO BE SOLVED: To provide a system and a method for depositing a film, in which an HSG-Si film can be formed uniformly and stably by completely removing the effect of impurities, e.g. moisture, oxygen and organic matters discharged from an exhaust line. SOLUTION: The system for depositing film comprises a reaction chamber 12 performing a prescribed processing on an article being processed, first exhaust means (24, 32) for exhausting the reaction chamber 12 until a first pressure is reached, second exhaust means (23, 31) for exhausting the reaction chamber 12 exhausted by the first exhaust means, until a second pressure lower than the first pressure is reached, and a means 27 for supplying the first exhaust means (24, 32) with a gas which can remove the gas impurities in at least the first exhaust means (24, 32). |
