| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure and a manufacturing method for improving performance of each integrated optical element with different functions easily, and further realizing a semiconductor optical element having different optical gains and light absorption characteristics in TE and TM modes with respect to the optical integrated element having a semiconductor quantum well structure. SOLUTION: The semiconductor optical integrated element made up of each semiconductor element having an optical waveguide layer with different grating asymmetric amounts, with respect to the semiconductor substrate as a crystal growth layer constituting a quantum well structure, for each optical function part are integrated on the same semiconductor substrate. At the same time, the manufacturing method for the semiconductor optical integrated element by using an insulating film patterning mask formed on the semiconductor substrate is disclosed. In this case, the element design that can improve each elemental characteristic of each integrated optical element to the maximum and realized almost 100% optical coupling are realized.
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