| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent unnecessary stress from being applied to a memory cell in a previously verify-passed chip in a program/program-verify cycle, and a erase/erase-verify cycle in a simultaneous test of plural chips of a non-volatile semiconductor memory. SOLUTION: In a program/program-verify cycle and a erase/erase-verify cycle, a non-volatile storage element over-writen preventing circuit masks a mode enable-mask internal signal line 111 by a pass signal outputted by a memory control circuit 103 through a verify-pass signal line 110. Therefore, even if an active signal is inputted from a mode enable-mask signal line 118, since the mode enable-mask internal signal line 111 is masked, the program mode/ erase mode inputted from a mode selecting signal line 114 cannot be made active, unncessary stress for a memory cell array 104 can be eliminated.</p> |
