发明名称 OZONE TREATING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an ozone treating apparatus for improving temperature distribution in the inside of the surface of a wafer of a material to be treated. SOLUTION: The ozone treating apparatus comprises a means for supplying a process gas containing the ozone to a reaction chamber 7, a first stage shower plate 10 provided at a passage for supplying the process gas to the wafer 1 placed in the chamber 7, and a second stage shower plate 22. It is preferred to provide two to four stages of the shower plates.
申请公布号 JP2002134478(A) 申请公布日期 2002.05.10
申请号 JP20000325825 申请日期 2000.10.25
申请人 HITACHI LTD 发明人 KAWASAKI HIROMICHI;FUJITO TOSHIAKI
分类号 G03F7/42;H01L21/027;H01L21/302;H01L21/304;H01L21/3065;(IPC1-7):H01L21/306 主分类号 G03F7/42
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