| 摘要 |
PROBLEM TO BE SOLVED: To reduce nonconforming action caused by overcoupling among the adjacent lines in a memory matrix, comprising a cell field composed of row lines and column lines in which the memory elements are situated at each point, where the row lines and column lines intersect one another, and the column line and/or row lines of the cell field are placed adjacent to each other. SOLUTION: This memory matrix is constituted, such that the order of row lines or column lines are equal in the edges of the memory matrix counterposed to each other regarding changes in the configurational constitution of the lines. As a result of this, additional circuit cost for executing address decoding, namely an additional circuit cost generated when an address line is not assigned correspondingly or it has a different order from the original order is avoided. For the case of MRAM, the connection constitution of the row lines and column lines in both edges of a cell field becomes advantageous. Furthermore, the cell field or its row lines and/or column line is made symmetrical by a mirror image, regarding changes in their arrangement constitution.
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