| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing metal wiring which can prevent an erosion due to metal depressions and abrasions of dielectric layer during chemical mechanical polishing and can improve a degree of analysis of exposure. SOLUTION: First, a semiconductor substrate having an electric conductive area is provided. Then, a dielectric layer which covers the overall semiconductor substrate is formed. A sacrifice layer is then formed on the surface of the dielectric layer. Next, the sacrifice layer and the dielectric layer are selectively etched so as to form a damascene structure from which the electric conductive area is exposed, and a metal layer is formed on the overall damascene structure to fill the structure. Then, the metal layer is polished by chemical mechanical polishing, thereby, the metal layer on the surface of the sacrifice layer is removed to leave the metal structure as a metal wiring.
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