SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

A semiconductor device comprises an insulation film (14) formed over a semiconductor substrate (1), a wiring groove (14b) and a hole (14a) formed in the insulation film (14), a first conductive base layer (16) formed in at least one of the wiring groove (14b) and hole (14a) and preventing copper diffusion, a main conductive layer (19) formed over the first base layer (16) and made of copper or a copper alloy in at least one of the wiring groove (14b) and hole (14a), a second base layer (17) formed between the main conductor layer (19) and the first base layer (16), having a metal element which dissolves into the main conductor layer (19) at an interface with the main conductor layer (19), and formed over the first base layer (16) by CVD.