| 摘要 |
PROBLEM TO BE SOLVED: To improve oscillation efficiency, heat dissipation, yields, and mountability on a plane circuit, etc., of a Gunn diode. SOLUTION: The Gunn diode has such a structure that a heavily doped n-type InP semiconductor layer 12 and a lightly doped n-type InP active layer 13 are deposited in this order on a high density n-type InP substrate 11, and a cathode electrode 15 and an anode electrode 18 are provided to apply voltage to the active layer 13. The cathode electrode 15 is brought into direct contact with the active layer 13 so that the Schottky barrier height may be within the range of nearly 0.2 to 0.4 eV, and the anode electrode has an ohmic contact with a heavily doped layer 17 formed by implantation of silicon ions into the active layer 13.
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